Stability of 180° domain in ferroelectric thin films
نویسندگان
چکیده
منابع مشابه
Stability Analysis of Domains in Ferroelectric Thin Films
Ferroelectric domain switching under low voltage or short pulses is of interest to the development of high-density random access memory (FRAM) devices. Being necessarily very small in size, instability and back switching often occurs when the external voltage is removed, and creates serious problems. In this investigation, a general approach to determine the minimum size of ferroelectric domain...
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Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conduc...
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The stability and evolution of ferroelectric domain structures in thin films are studied. Elastic solutions are derived for both elastically anisotropic and isotropic thin films with arbitrary domain structures, subject to the mixed stressfree and constraint boundary conditions. These solutions are employed in a three-dimensional phase-field model to investigate simultaneously the effect of sub...
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We investigated domain kinetics by measuring the polarization switching behaviors of (111)-preferred polycrystalline Pb(Zr,Ti)O3 films, which are widely used in ferroelectric memories. Their switching behaviors at various electric fields and temperatures could be explained by assuming the Lorentzian distribution of logarithmic domain-switching times. We suggested that the local field variation ...
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Commonly used ferroelectric perovskites are also wide-band-gap semiconductors. In such materials, the polarization and the space-charge distribution are intimately coupled, and this Letter studies them simultaneously with no a priori ansatz on either. In particular, we study the structure of domain walls and the depletion layers that form at the metal-ferroelectric interfaces. We find the coupl...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2003
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.1578529